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SGW02N120
Fast IGBT in NPT-technology
* Lower Eoff compared to previous generation * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter - SMPS * NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability * Qualified according to JEDEC1 for target applications * Pb-free lead plating; RoHS compliant * Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGW02N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Gate-emitter voltage Avalanche energy, single pulse IC = 2A, VCC = 50V, RGE = 25, start at Tj = 25C Short circuit withstand time2 VGE = 15V, 100V VCC 1200V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 C Ptot 50 W tSC 10 s VGE EAS 20 10 V mJ ICpuls Symbol VCE IC 6.2 2.8 9.6 9.6 Value 1200 Unit V A VCE 1200V IC 2A Eoff 0.11mJ Tj 150C Marking Package Ordering Code On Request
C
G
E
PG-TO-247-3-1 (TO-247AC)
G02N120 PG-TO-247-3-1
1 2
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2 Jan. 05
Power Semiconductors
SGW02N120
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 10 0A VCE(sat) V G E = 15V, I C = 2A T j = 25 C T j = 15 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 10 0A, V C E =V G E V C E = 1200V, V G E = 0V T j = 25 C T j = 15 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current2) IC(SC) V G E = 1 5V,t S C 10s 100V V C C 1200V, T j 150 C 24 A Ciss Coss Crss QGate LE V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 9 60V, I C = 2A V G E = 1 5V PG-TO-247-3-1 13 nH 205 20 12 11 250 25 14 nC pF IGES gfs V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 2A 1.5 25 100 100 nA S 2.5 3 3.1 3.7 4 3.6 4.3 5 A 1200 V Symbol Conditions Value min. typ. max. Unit RthJA PG-TO-247-3-1 40 RthJC 2.5 K/W Symbol Conditions Max. Value Unit
2)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2 Jan. 05
Power Semiconductors
SGW02N120
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25 C, V C C = 8 00V, I C = 2A , V G E = 1 5V/ 0 V, R G = 9 1 , L 1 ) = 180nH, C 1 ) = 4 0 pF Energy losses include "tail" and diode reverse recovery. 23 16 260 61 0.16 0.06 0.22 30 21 340 80 0.21 0.08 0.29 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 15 0 C V C C = 8 00V, I C = 2A , V G E = 1 5V/ 0 V, R G = 9 1 , L 1 ) = 180nH, C 1 ) = 4 0 pF Energy losses include "tail" and diode reverse recovery. 26 14 290 85 0.27 0.11 0.38 31 17 350 102 0.33 0.15 0.48 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E.
Power Semiconductors
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Rev. 2
Jan. 05
SGW02N120
12A
Ic
10A
tp=10s
10A
IC, COLLECTOR CURRENT
8A
6A
TBD
TC=80C TC=110C
IC, COLLECTOR CURRENT
1A
TBD
50s 20ms DC 1V 10V 100V 1000V
150s
500s
4A
0.1A
2A
Ic
0.01A
0A 10Hz
100Hz
1kHz
10kHz
100kHz
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 91)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
7A
60W
6A
50W
40W
IC, COLLECTOR CURRENT
50C 75C 100C 125C
POWER DISSIPATION
5A 4A 3A 2A 1A
30W
20W
Ptot,
10W 0W 25C
0A 25C
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
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Rev. 2
Jan. 05
SGW02N120
7A 6A 5A 4A 3A 2A 1A 0A 0V 7A 6A 5A 4A 3A 2A 1A 0A 0V
IC, COLLECTOR CURRENT
1V
2V
3V
4V
5V
6V
7V
IC, COLLECTOR CURRENT
VGE=17V 15V 13V 11V 9V 7V
VGE=17V 15V 13V 11V 9V 7V
1V
2V
3V
4V
5V
6V
7V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
6A 5A 4A 3A 2A 1A 0A 3V Tj=+150C Tj=+25C Tj=-40C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
7A
6V
5V IC=4A 4V IC=2A 3V IC=1A 2V
IC, COLLECTOR CURRENT
1V
5V
7V
9V
11V
0V -50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
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Rev. 2
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SGW02N120
td(off) td(off)
t, SWITCHING TIMES
100ns
t, SWITCHING TIMES
tf
100ns
tf
td(on) tr
td(on)
tr 10ns 0A 2A 4A 6A 8A 10ns 0 50 100 150
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 91, dynamic test circuit in Fig.E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 2A, dynamic test circuit in Fig.E)
6V
td(off)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5V max.
t, SWITCHING TIMES
100ns
4V
tf
3V
typ.
td(on)
2V
min.
1V
tr 10ns -50C 0C 50C 100C 150C
0V -50C
0C
50C
100C
150C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 2A, RG = 91, dynamic test circuit in Fig.E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA)
Power Semiconductors
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Rev. 2
Jan. 05
SGW02N120
2.0mJ
*) Eon and Ets include losses due to diode recovery.
0.5mJ Ets*
*) Eon and Ets include losses due to diode recovery.
E, SWITCHING ENERGY LOSSES
1.5mJ
E, SWITCHING ENERGY LOSSES
0.4mJ
Ets*
0.3mJ
1.0mJ
Eon*
Eon*
0.2mJ
0.5mJ Eoff
0.1mJ
Eoff
0.0mJ 0A 2A 4A 6A 8A
0.0mJ 0 50 100 150
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 91, dynamic test circuit in Fig.E )
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 2A, dynamic test circuit in Fig.E )
0.4mJ
*) Eon and Ets include losses due to diode recovery.
ZthJC, TRANSIENT THERMAL IMPEDANCE
Ets*
D=0.5 10 K/W 0.2 0.1 0.05 10 K/W 0.02 0.01
R1 R2
-1 0
E, SWITCHING ENERGY LOSSES
0.3mJ Eon* 0.2mJ
R,(K/W) 0.66735 0.70472 0.62778
, (s) 0.04691 0.00388 0.00041
0.1mJ
Eoff
10 K/W single pulse
C 1 = 1 /R 1 C 2 = 2 /R 2
-2
0.0mJ -50C
0C
50C
100C
150C
1s
10s
100s
1ms
10ms 100ms
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 2A, RG = 91, dynamic test circuit in Fig.E )
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
Power Semiconductors
7
Rev. 2
Jan. 05
SGW02N120
20V
Ciss
VGE, GATE-EMITTER VOLTAGE
15V
C, CAPACITANCE
100pF
10V
UCE=960V
5V
Coss 0V 0nC 10pF 0V Crss 10V 20V 30V
5nC
10nC
15n
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 2A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
30s
40A
tsc, SHORT CIRCUIT WITHSTAND TIME
25s
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
11V 12V 13V 14V 15V
30A
20s
15s
20A
10s
10A
5s
0s 10V
0A 10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 1200V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V VCE 1200V, TC = 25C, Tj 150C)
Power Semiconductors
8
Rev. 2
Jan. 05
SGW02N120
TO-247AC PG-TO247-3-1
symbol min A B C D E F G H K L M N P Q 6.12 4.78 2.29 1.78 1.09 1.73 2.67 [mm] max 5.28 2.51 2.29 1.32 2.06 3.18 min 0.1882 0.0902 0.0701 0.0429 0.0681 0.1051 dimensions [inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252
0.76 max 20.80 15.65 5.21 19.81 3.560 3.61 6.22 21.16 16.15 5.72 20.68 4.930
0.0299 max 0.8189 0.6161 0.2051 0.7799 0.1402 0.8331 0.6358 0.2252 0.8142 0.1941
0.1421 0.2409 0.2449
Power Semiconductors
9
Rev. 2
Jan. 05
SGW02N120
i,v diF /dt tr r =tS +tF Qr r =QS +QF tr r IF tS QS tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
2
r2
r1
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH, and stray capacity C =40pF.
Power Semiconductors
10
Rev. 2
Jan. 05
SGW02N120
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2002 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
11
Rev. 2
Jan. 05

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